Semiconductor device

ABSTRACT

According to one embodiment, a semiconductor device includes a stacked body, a columnar portion, a first charge storage portion, and a second charge storage portion. The stacked body includes a plurality of electrode layers stacked in a first direction. The plurality of electrode layers includes a first electrode layer, and a second electrode layer. The columnar portion extends in the first direction in the stacked body. The first charge storage portion provides between the first electrode layer and the columnar portion. The second charge storage portion provides between the second electrode layer and the columnar portion. A first thickness in a second direction intersecting the first direction of the first charge storage portion between the first electrode layer and the columnar portion is thicker than a second thickness in the second direction of the second charge storage portion between the second electrode layer and the columnar portion.

CROSS-REFERENCE TO RELATED APPLICATIONS

This application is based upon and claims the benefit of priority fromU.S. Provisional Patent Application 62/376,740 filed on Aug. 18, 2016;the entire contents of which are incorporated herein by reference.

FIELD

Embodiments described herein relate generally to a semiconductor device.

BACKGROUND

A semiconductor memory device having a three-dimensional structure hasbeen proposed in which a memory hole is formed in a stacked bodyincluding a plurality of electrode layers stacked thereon, a columnarportion is provided in the memory hole, a plurality of charge storageportions are respectively provided between the plurality of electrodelayers and the columnar portion in a stacking direction of the stackedbody. In order to increase the capacity of the semiconductor memorydevice, it is desired to increase the number of stacked electrodelayers. Increasing the number of stacked electrode layers makes itdifficult to form a memory hole having a uniform diameter in thestacking direction. Variations in the diameter of the memory hole in thestacking direction can lead to variations in the coupling ratio betweenthe electrode layer and the channel.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a schematic perspective view of a memory cell array of asemiconductor device of a first embodiment;

FIG. 2 is a schematic sectional view of the memory cell array of thesemiconductor device of the first embodiment;

FIG. 3 is a schematic sectional view taken along line III-III in FIG. 2;

FIG. 4 is a schematic sectional view taken along line IV-IV in FIG. 2;

FIG. 5 is a graph illustrating the relationship between the diameter ofthe columnar portion and the coupling ratio;

FIGS. 6 to 13 are schematic sectional views showing a manufacturingmethod of the semiconductor device of the first embodiment;

FIG. 14 is a schematic perspective view of a memory cell array of asemiconductor device of another example of the first embodiment;

FIG. 15 is a schematic sectional view of the memory cell array of thesemiconductor device of the first embodiment;

FIGS. 16 to 21 are schematic sectional views showing the manufacturingmethod of the semiconductor device of the second embodiment;

FIG. 22 is a schematic sectional view of a memory cell array of asemiconductor device of a third embodiment; and

FIGS. 23 to 26 are schematic sectional views showing the manufacturingmethod of the semiconductor device of the third embodiment.

DETAILED DESCRIPTION

According to one embodiment, a semiconductor device includes a stackedbody, a columnar portion, a first charge storage portion, and a secondcharge storage portion. The stacked body includes a plurality ofelectrode layers stacked on a substrate in a first direction with aninsulator interposed between the electrode layers. The plurality ofelectrode layers includes a first electrode layer, and a secondelectrode layer provided between the first electrode layer and thesubstrate. The columnar portion extends in the first direction in thestacked body. The first charge storage portion provides between thefirst electrode layer and the columnar portion. The second chargestorage portion provides between the second electrode layer and thecolumnar portion. A first thickness in a second direction intersectingthe first direction of the first charge storage portion between thefirst electrode layer and the columnar portion is thicker than a secondthickness in the second direction of the second charge storage portionbetween the second electrode layer and the columnar portion.

Hereinafter, embodiments will be described with reference to thedrawings. The same reference numerals are attached to the same elementsin each drawing. The semiconductor device of the embodiment is asemiconductor memory device including a memory cell array.

FIRST EMBODIMENT Semiconductor Device

FIG. 1 is a schematic perspective view of a memory cell array of asemiconductor device of a first embodiment.

As shown in FIG. 1, in the semiconductor device of the first embodiment,two directions which are parallel to a major surface 10 a of a substrate10 and orthogonal to each other are an X-direction and a Y-direction,and a direction which is orthogonal to these X-direction and Y-directionis a Z-direction. For example, the Z-direction corresponds to a firstdirection, the X-direction corresponds to a second direction, and theY-direction corresponds to a third direction.

A memory cell array 1 of the semiconductor device of the firstembodiment includes a stacked body 100 including a plurality ofelectrode layers 41, a plurality of columnar portions CL, and aplurality of separating portions ST. The plurality of electrode layers41 are stacked on the major surface 10 a of the substrate 10 so as to beseparated from each other. The number of plurality of stacked electrodelayers 41 is arbitrary. For example, each of the plurality of electrodelayers 41 includes doped silicon. The doped silicon includes, forexample, one or more materials selected from the group consisted ofphosphorus, arsenic, and boron.

For example, the higher the impurity concentrations of the plurality ofelectrode layers 41, the farther from the substrate 10 the electrodelayers 41 are. For example, the impurity concentration of the electrodelayer 41 closest to the substrate 10 is about 1×10²⁰ cm⁻³, and theimpurity concentration of the electrode layer 41 farthest from thesubstrate 10 is about 3×10²⁰ cm⁻³.

For example, each of the plurality of electrode layers 41 may includemetal such as tungsten or molybdenum.

An insulator 40 is disposed among a plurality of electrode layers 41.The insulator 40 may be, for example, an insulating material such as asilicon oxide film, or may be an air gap.

A plurality of electrode layers 41 include a drain-side select gateelectrode SGD, a plurality of word lines WL, and a source-side selectgate electrode SGS.

For example, the source-side select gate electrode SGS is provided onthe substrate 10. For example, the plurality of word lines WL areprovided on the source-side select gate electrode SGS. For example, thedrain-side select gate electrode SGD is provided on the plurality ofword lines WL.

The drain-side select gate electrode SGD functions as a gate electrodeof the drain-side select transistor STD. The source-side select gateelectrode SGS functions as a gate electrode of the source-side selecttransistor STS. A plurality of memory cells MC are connected in seriesbetween the drain-side select transistor STD and the source-side selecttransistor STS. One word line WL functions as a gate electrode of onememory cell MC.

The stacked body 100 includes a plurality of separating portions ST. Theseparating portions ST extend inside the stacked body 100 in theZ-direction and the Y-direction. The separating portion ST separates thestacked body 100 in the X-direction. The region separated by theseparating portion ST is called “block”. The block is, for example, aminimum unit of information erase. The erase size is set for one blockor a plurality of blocks which are combined.

A source layer SL is provided in the separating portion ST. The sourcelayer SL is insulated from the stacked body 100, and spreads like aplate, for example, in the Z-direction and the Y-direction. An upperlayer wiring 80 is provided above the source layer SL. The upper layerwiring 80 extends in the X-direction. The upper layer wiring 80 iselectrically connected to a plurality of source layers SL which arearranged in the X-direction.

A plurality of columnar portions CL are provided in the stacked body 100separated by the separating portion ST. The columnar portions CL extendin the stacked body 100 in the Z-direction.

The columnar portions CL are disposed in the form of, for example, ahoundstooth pattern or a square lattice pattern, in the memory cellarray 1.

A plurality of bit lines BL are provided above the upper end portion ofthe columnar portions CL. The plurality of bit lines BL extend in theX-direction. The upper end portion of the columnar portions CL areelectrically connected to one of the bit lines BL through the contactportion Cb and the contact portion V1.

FIG. 2 is a schematic sectional view of the memory cell array of thesemiconductor device of the first embodiment. FIG. 2 corresponds to apart of the cross section parallel to the XZ plane in FIG. 1. FIG. 2 isa schematic sectional view obtained by extracting the columnar portionCL and its surrounding portion. FIG. 3 is a schematic sectional viewtaken along line III-III in FIG. 2. FIG. 4 is a schematic sectional viewtaken along line IV-IV in FIG. 2.

As shown in FIG. 2, a plurality of electrode layers 41 include, forexample, a first electrode layer 41 a, a second electrode layer 41 b,and a third electrode layer 41 c. The second electrode layer 41 b isdisposed between the first electrode layer 41 a and the substrate 10.The third electrode layer 41 c is disposed between the first electrodelayer 41 a and the second electrode layer 41 b.

As shown in FIGS. 2 to 4, the columnar portion CL extends in the stackedbody 100 in the Z-direction and is electrically connected to thesubstrate 10. For example, the columnar portion CL has a substantiallycolumnar shape. For example, the columnar portion CL has a taperedshape. In other words, the smaller the diameter of the columnar portionCL, the closer to the substrate 10 the columnar portion CL is.

The columnar portion CL includes a core portion 51 and a semiconductorbody 52. The core portion 51 extends in the stacked body 100 in theZ-direction. The semiconductor body 52 is provided between the coreportion 51 and the stacked body 100 and between the core portion 51 andthe substrate 10.

A plurality of charge storage portions 32 are provided between thecolumnar portions CL and the plurality of electrode layers 41. Forexample, the charge storage portions 32 are floating gates or chargetrapping layers. An insulator 40 is disposed among the plurality ofcharge storage portions 32. The respective charge storage portions 32are spaced apart in the Z-direction by the insulator 40. For example,the smaller the thickness of the charge storage portion 32 between thecolumnar portion CL and the electrode layer 41, the closer to thesubstrate 10 the charge storage portion 32 is.

In the specification, the thickness of the charge storage portion 32 isthe thickness of the charge storage portion 32 in the direction in theX-direction between the columnar portion CL and the electrode layer 41.

The plurality of charge storage portions 32 include for example, a firstcharge storage portion 32 a, a second charge storage portion 32 b, and athird charge storage portion 32 c. For example, the first charge storageportion 32 a is disposed between the columnar portion CL and the firstelectrode layer 41 a. For example, the second charge storage portion 32b is disposed between the columnar portion CL and the second electrodelayer 41 b. For example, the third charge storage portion 32 c isdisposed between the columnar portion CL and the third electrode layer41 c.

For example, the thickness L1 of the first charge storage portion 32 ain the X-direction between the columnar portion CL and the firstelectrode layer 41 a is thicker than the thickness L2 of the secondcharge storage portion 32 b in the X-direction between the columnarportion CL and the second electrode layer 41 b.

For example, the thickness L3 of the third charge storage portion 32 cin the X-direction between the columnar portion CL and the thirdelectrode layer 41 c is a thickness not more than the thickness L1. Forexample, the thickness L3 is a thickness not less than the thickness L2.

A tunnel insulating film 31 is provided between the columnar portion CLand each charge storage portion 32 and between the columnar portion CLand the insulator 40. For example, the tunnel insulating film 31 iscylindrical. For example, the smaller the inner diameter of the tunnelinsulating film 31, the closer to the substrate 10 the tunnel insulatingfilm 31 is.

For example, the inner diameter D1 of the tunnel insulating film 31between the columnar portion CL and the first charge storage portion 32a is larger than the inner diameter D2 of the tunnel insulating film 31between the columnar portion CL and the second charge storage portion 32b.

For example, the size of the inner diameter D3 of the tunnel insulatingfilm 31 between the columnar portion CL and the third charge storageportion 32 c is not more than the size of the inner diameter D1. Thesize of the inner diameter D3 is not less than the size of the innerdiameter D2.

A block insulating film 33 is provided between the charge storageportion 32 and the electrode layer 41. For example, a plurality of blockinsulating films 33 are provided for respective electrode layers 41.

Examples of the plurality of block insulating films 33 include a firstblock insulating film 33 a, a second block insulating film 33 b, and athird block insulating film 33 c. The first block insulating film 33 ais disposed between the first charge storage portion 32 a and the firstelectrode layer 41 a. The second block insulating film 33 b is disposedbetween the second charge storage portion 32 b and the second electrodelayer 41 b. The third block insulating film 33 c is disposed between thethird charge storage portion 32 c and the third electrode layer 41 c.

The charge storage portion 32 includes for example, silicon. In a caseof a floating gate, the charge storage portion 32 stores charges. In acase of a charge trapping layer, the charge storage portion 32 has atrapping site for trapping charges and traps charges. The threshold ofthe memory cell MC varies depending on the amount of charge present inthe charge storage portion. Thus, the memory cell MC stores information.The tunnel insulating film 31 includes for example, silicon oxide. Thetunnel insulating film 31 is a potential barrier between the chargestorage portion 32 and the semiconductor body 52. The tunnel insulatingfilm 31 tunnels charges when charges are injected into the chargestorage portion 32 from the semiconductor body 52 (write operation), andwhen charges are diffused from the charge storage portion 32 to thesemiconductor body 52 (erase operation). The block insulating film 33may contain for example, aluminum oxide, may contain silicon oxide, ormay be a stacked film thereof. The block insulating film 33 suppressestunneling from the charge storage portion 32 to the word line during thewrite operation, and suppresses back tunneling of charges from the wordline WL to the charge storage portion 32 during the erase operation.

Assuming that the capacitance of the block insulating film 33 is C_(IPD)and the capacitance of the tunnel insulating film 31 is C_(ox), when thevoltage (write voltage) applied to the word line WL during the writeoperation is V_(PGM), the voltage V_(TNL) applied to the tunnelinsulating film during the write operation can be represented by, forexample,

V _(TNL)=(C _(IPD)/(C _(IPD) +C _(ox)))×V _(PGM)  (1).

In Equation (1), C_(IPD)/(C_(IPD)+C_(ox)) is called “coupling ratio”.

FIG. 5 is a graph illustrating the relationship between the diameter ofthe columnar portion and the coupling ratio. FIG. 5 is a graph showingthe diameter of the columnar portion CL on the horizontal axis and thecoupling ratio on the vertical axis. The solid line shows data when thethickness of each charge storage portion 32 between the columnar portionCL and the electrode layer 41 is 10 nm. The broken line shows data whenthe thickness of each charge storage portion 32 between the columnarportion CL and the electrode layer 41 is 5 nm.

For example, a configuration in which the columnar portion CL has atapered shape and the thickness of each charge storage portion 32between the columnar portion CL and the electrode layer 41 is constantmay be considered. In this case, as the diameter of the columnar portionCL decreases, a difference between the inner diameter of the blockinsulating film 33 and the inner diameter of the tunnel insulating film31 increases. For example, variations in the difference between thecircumferential length of the block insulating film 33 and thecircumferential length of the tunnel insulating film 31 are increasedbetween the upper and lower layers of the memory cell array. Therefore,the coupling ratio of the corresponding region changes depending on thediameter of the columnar portion CL. As shown in FIG. 5, as the diameterof the columnar portion CL decreases, the coupling ratio of thecorresponding region increases. For example, a difference AC in couplingratios occurs between a region where the diameter of the columnarportion CL is small and a region where the diameter of the columnarportion CL is large. This results in that variations in the couplingratio occur between the upper and lower layers of the memory cell array.This results in that variations in the writing speed occur between theupper and lower layers of the memory cell array. During a readoperation, read disturb is remarkable.

As shown in FIG. 5, the coupling ratio in the region where the columnarportion CL is large when the thickness of the charge storage portion 32is 10 nm shows approximately the same value as the coupling ratio in theregion where the columnar portion CL is small when the thickness of thecharge storage portion 32 is 5 nm. In the first example, the thicknessof the charge storage portion 32 in the region where the diameter of thecolumnar portion CL is small is shorter than the thickness of the chargestorage portion 32 in the region where the diameter of the columnarportion CL is large. With such a configuration, the difference AC incoupling ratios between the upper and lower layers of the memory cellcan be reduced.

For example, as the diameter of the columnar portion CL decreases, theratio between the inner diameter of the block insulating film 33 and theinner diameter of the tunnel insulating film 31 is suppressed fromincreasing. Therefore, the variation in the ratio between thecircumferential length of the block insulating film 33 and thecircumferential length of the tunnel insulating film 31 is suppressedbetween the upper and lower layers of the memory cell array. Thus,variations in the coupling ratio between the upper and lower layers ofthe memory cell array are suppressed. For example, variations in writingspeed between the upper and lower layers of the memory cell array can besuppressed. In addition, read disturb and write disturb can besuppressed.

In the first embodiment, in a case where each electrode layer 41contains doped silicon, the higher the impurity concentration of theelectrode layer 41, the farther from the substrate 10 the electrodelayer 41 is. Thus, the lower the resistivity of the electrode layer 41,the farther from the substrate 10 the electrode layer 41 is. Forexample, it is possible to correct the signal propagation delay of theword line caused by the difference in word line resistance, due to adifference between the memory hole diameters of the upper and lowerlayers of the memory cell array, by controlling the resistivity of theelectrode layer 41.

Manufacturing Method

FIGS. 6 to 13 are schematic sectional views showing a manufacturingmethod of the semiconductor device of the first embodiment. FIGS. 6 to13 correspond to the cross section shown in FIG. 2.

As shown in FIG. 6, the insulator 40 which is a first layer and theelectrode layer 41 which is a second layer are alternately stacked onthe substrate 10. Thus, the stacked body 100 including the electrodelayer 41 stacked on the substrate 10 with the insulator 40 interposedtherebetween is formed. The insulator 40 is formed of, for example, amaterial containing silicon oxide. For example, the electrode layer 41is formed of a material containing doped silicon. The doped siliconincludes, for example, one or more materials selected from the groupconsisted of phosphorus, arsenic, and boron. For example, the higher theimpurity concentration of the electrode layer 41, the farther from thesubstrate 10 the electrode layer 41 is. For example, the electrode layer41 may be formed of a material containing metal such as tungsten.

As shown in FIG. 7, for example, a memory hole MH1 is formed in thestacked body 100 by a photolithography method. The memory hole MH1extends in the Z-direction in the stacked body 100. The memory hole MH1penetrates the stacked body 100 and reaches the upper surface of thesubstrate 10. For example, the memory hole MH1 has a tapered shape. Forexample, the smaller the diameter of the memory hole MH1, the closer tothe substrate 10 the memory hole MH1 is.

As shown in FIG. 8, a sacrificial member 50 a is formed in the memoryhole MH1. For example, the sacrificial member 50 a is formed at thelower part of the memory hole MH1.

As shown in FIG. 9, an etching process is performed on the end face ofthe electrode layer 41 exposed in the memory hole MH1. For example, anetchant is supplied into the memory hole MH1. Thus, the end face of theelectrode layer 41 exposed in the memory hole MH1 retreats. At thistime, the lower part of the memory hole MH1 is filled with thesacrificial member 50 a. Therefore, the electrode layer 41 in the lowerpart of the memory hole MH1 is not etched.

As shown in FIG. 10, the sacrificial member 50 a is removed by anetching process such as chemical dry etching or wet etching.

As shown in FIG. 11, an etching process is performed on the end face ofthe electrode layer 41 exposed in the memory hole MH1. For example,etchant is supplied into the memory hole MH1. Thus, the end face of theelectrode layer 41 exposed in the memory hole MH1 retreats.

By performing the processes shown in FIGS. 9 and 10, the retreat amountof the end face of the electrode layer 41 increases as the distance fromthe substrate 10 increases. Note that in the case where the retreatamount of the end face of the electrode layer 41 can be controlledaccording to the conditions of the etching process or the like, thesacrificial member 50 a may not be formed. For example, when theelectrode layer 41 contains silicon and impurity, the etching rate maybe controlled by changing the impurity concentration for each electrodelayer 41.

Next, as shown in FIG. 11, the block insulating film 33 is formed on theinner wall of the space generated by the retraction of the electrodelayer 41. The block insulating film 33 is formed of, for example, amaterial containing aluminum oxide. The block insulating film 33 may beformed of a material containing, for example, silicon oxide. Thereafter,the charge storage portion 32 is formed in the space by the retractionof the electrode layer 41. The charge storage portion 32 is formed of amaterial containing, for example, polysilicon or silicon nitride.Further, the block insulating film 33 and the charge storage portion 32are etched back by chemical dry etching or the like up to a place wherethere is no step from the memory hole MH1 and they are aligned with theinsulator 40, and are separated for each layer. Thus, the spacegenerated by the retraction of the electrode layer 41 is filled with theblock insulating film 33 and the charge storage portion 32.

As shown in FIG. 12, the tunnel insulating film 31 is formed on theinner wall of the memory hole MH1. The tunnel insulating film 31 isformed of at least one material selected from the group consisted of forexample, silicon oxide, silicon oxynitride, and silicon nitride. Thetunnel insulating film 31 may be formed as a stacked film including asilicon oxide film, a silicon oxynitride film, and a silicon nitridefilm.

As shown in FIG. 13, the semiconductor film 52 a is formed on the tunnelinsulating film 31. The tunnel insulating film 31 and the semiconductorfilm 52 a formed at the bottom of the memory hole MH1 are removed byanisotropic etching. At this time, the tunnel insulating film 31 and thesemiconductor film 52 a formed on the side wall of the memory hole MH1remain. The tunnel insulating film 31 formed on the side wall of thememory hole MH1 is protected from the influence of anisotropic etchingby the semiconductor film 52 a formed thereon.

Thereafter, the semiconductor body 52 is formed in the memory hole MH1as shown in FIG. 2. The semiconductor body 52 is electrically connectedto the substrate 10. The semiconductor film 52 a is a part of thesemiconductor body 52. Thereafter, the core portion 51 is formed in thememory hole MH1. The core portion 51 is formed of, for example, amaterial containing silicon oxide. The memory hole MH1 is filled withthe semiconductor body 52 and the core portion 51.

The semiconductor device of the first embodiment can be manufactured by,for example, such a manufacturing method.

In the manufacturing method of the semiconductor device of the firstembodiment, the sacrificial member 50 a is formed in the memory holeMH1. Thus, the retreat amount of the end face of the electrode layer 41is controlled, as shown in FIGS. 8 and 9.

In the manufacturing method of the semiconductor device of the firstembodiment, the impurity concentration may be changed for each electrodelayer 41. For example, the farther from the substrate 10, the higher theimpurity concentration of the electrode layer 41 may be. Thus, theetching rate of the electrode layer 41 can be controlled. For example,when performing the processes shown in FIGS. 8 and 9, the etchingconditions are relaxed. For example, it is possible to control theretreat amount of the end face of the electrode layer 41 without formingthe sacrificial member 50 a.

FIG. 14 is a schematic perspective view of a memory cell array of asemiconductor device of another example of the first embodiment.

Although the memory cell array is formed on the substrate 10 in theabove example, a buried source line electrode containing polysilicon ortungsten may be formed flat on a peripheral circuit formed on a siliconsubstrate, and a memory cell array may be formed on the buried sourceline electrode.

In this case, a peripheral circuit 11 is provided on the major surface10 a of the substrate 10 as shown in FIG. 14. The peripheral circuit 11includes a transistor Tr provided in the insulating film. A source lineelectrode 12 (a buried source line electrode) is provided on theperipheral circuit 11. An insulating film 13 is provided on the sourceline electrode 12. A semiconductor layer 14 is provided on theinsulating film 13. The stacked body 100 is provided on thesemiconductor layer 14.

SECOND EMBODIMENT Semiconductor Device

FIG. 15 is a schematic sectional view of the memory cell array of thesemiconductor device of the first embodiment. FIG. 15 corresponds to apart of a cross section parallel to the XZ plane in FIG. 1. FIG. 15 is aschematic sectional view obtained by extracting the columnar portion CLand its surrounding portion.

As shown in FIG. 15, a memory cell array 2 of the semiconductor deviceof the first embodiment includes a stacked body 100, a columnar portionCL, a tunnel insulating film 31, a plurality of charge storage portions32, and a plurality of block insulating films 33.

The stacked body 100 includes a plurality of electrode layers 41 stackedon a substrate 10 in the Z-direction with an insulator 40 interposedtherebetween. The stacked body 100 includes a stacked portion 100 aincluding a part of the plurality of electrode layers 41 and a stackedportion 100 b including another part of the plurality of electrodelayers 41. The stacked portion 100 a is provided on the substrate 10.The stacked portion 100 b is provided between the substrate 10 and thestacked portion 100 a.

The columnar portion CL extends in the stacked body 100 in theZ-direction. The columnar portion CL includes a first columnar portionCLa provided in the stacked portion 100 a and a second columnar portionCLb provided in the stacked portion 100 b.

For example, the first columnar portion CLa and the second columnarportion CLb each have a tapered shape. For example, the smaller thediameter of the first columnar portion CLa, the closer to the substrate10 the first columnar portion CLa is. The smaller the diameter of thesecond columnar portion CLb, the closer to the substrate 10 the secondcolumnar portion CLb is. For example, the diameter of the lower end ofthe first columnar portion CLa is smaller than the diameter of the upperend of the second columnar portion CLb.

The plurality of charge storage portions 32 are provided between thecolumnar portion CL and the plurality of electrode layers 41. In thestacked portion 100 a, the shorter the thickness of the charge storageportion 32 between the columnar portion CL and one electrode layer 41,the closer to the stacked portion 100 b the charge storage portion 32is. In the stacked portion 100 b, the smaller the thickness of thecharge storage portion 32 between the columnar portion CL and oneelectrode layer 41, the closer to the substrate 10 the charge storageportion 32 is.

Examples of the plurality of electrode layers 41 include a firstelectrode layer 41 a, a second electrode layer 41 b, a third electrodelayer 41 c, a fourth electrode layer 41 d, a fifth electrode layer 41 e,and a sixth electrode layer 41 f.

The first electrode layer 41 a, the second electrode layer 41 b, and thefifth electrode layer 41 e are included in the stacked portion 100 a.The third electrode layer 41 c, the fourth electrode layer 41 d, and thesixth electrode layer 41 f are included in the stacked portion 100 b.

The second electrode layer 41 b is disposed between the first electrodelayer 41 a and the stacked portion 100 b. The fourth electrode layer isdisposed between the third electrode layer 41 c and the substrate 10.The fifth electrode layer 41 e is disposed between the first electrodelayer 41 a and the third electrode layer 41 c. The sixth electrode layer41 f is disposed between the third electrode layer 41 c and the fourthelectrode layer 41 d.

Examples of the plurality of charge storage portions 32 include a firstcharge storage portion 32 a, a second charge storage portion 32 b, athird charge storage portion 32 c, a fourth charge storage portion 32 d,a fifth charge storage portion 32 e, and a sixth charge storage portion32 f.

The first charge storage portion 32 a is disposed between the firstcolumnar portion CLa and the first electrode layer 41 a. The secondcharge storage portion 32 b is disposed between the first columnarportion CLa and the second electrode layer 41 b. The third chargestorage portion 32 c is disposed between the second columnar portion CLband the third electrode layer 41 c. The fourth charge storage portion 32d is disposed between the second columnar portion CLb and the fourthelectrode layer 41 d. The fifth charge storage portion 32 e is disposedbetween the first columnar portion CLa and the fifth electrode layer 41e. The sixth charge storage portion 32 f is disposed between the secondcolumnar portion CLb and the sixth electrode layer 41 f.

The thickness L4 in the X-direction of the first charge storage portion32 a between the first electrode layer 41 a and the first columnarportion CLa is thicker than the thickness L5 in the X-direction of thesecond charge storage portion 32 b between the second electrode layer 41b and the first columnar portion CLa. The thickness L6 in theX-direction of the third charge storage portion 32 c between the thirdelectrode layer 41 c and the second columnar portion CLb is thicker thanthe thickness L7 in the X-direction of the fourth charge storage portion32 d between the fourth electrode layer 41 d and the second columnarportion CLb. The thickness L5 is smaller than the thickness L6.

The thickness L8 in the X-direction of the fifth charge storage portion32 e between the fifth electrode layer 41 e and the first columnarportion CLa is a thickness not more than the thickness L4, and thethickness L8 is a thickness not less than the thickness L5. Thethickness L9 in the X-direction of the sixth charge storage portion 32 fbetween the sixth electrode layer 41 f and the second columnar portionCLb is a thickness not more than the thickness L6, and the thickness L9is a thickness not less than the thickness L7.

The block insulating film 33 is provided between the electrode layer 41and the charge storage portion 32. Examples of the plurality of blockinsulating films 33 include a first block insulating film 33 a, a secondblock insulating film 33 b, a third block insulating film 33 c, a fourthblock insulating film 33 d, a fifth block insulating film 33 e, and asixth block insulating film 33 f.

The first block insulating film 33 a is disposed between the firstcharge storage portion 32 a and the first electrode layer 41 a. Thesecond block insulating film 33 b is disposed between the second chargestorage portion 32 b and the second electrode layer 41 b. The thirdblock insulating film 33 c is disposed between the third charge storageportion 32 c and the third electrode layer 41 c. The fourth blockinsulating film 33 d is disposed between the fourth charge storageportion 32 d and the fourth electrode layer 41 d. The fifth blockinsulating film 33 e is disposed between the fifth charge storageportion 32 e and the fifth electrode layer 41 e. The sixth blockinsulating film 33 f is disposed between the sixth charge storageportion 32 f and the sixth electrode layer 41 f.

A tunnel insulating film 31 is provided between the columnar portion CLand the charge storage portion 32 and between the columnar portion CLand the insulator 40. For the example, the smaller the inner diameter ofthe tunnel insulating film 31 between the first columnar portion CLa andthe charge storage portion 32, the closer to the stacked portion 100 bthe tunnel insulating film 31 is. For example, the smaller the innerdiameter of the tunnel insulating film 31 between the second columnarportion CLb and the charge storage portion 32, the closer to thesubstrate 10 the tunnel insulating film 31 is. The inner diameter of thetunnel insulating film 31 provided around the lower end of the firstcolumnar portion CLa is smaller than the inner diameter of the tunnelinsulating film 31 provided around the upper end of the second columnarportion CLb.

For example, the size of the inner diameter D4 of the tunnel insulatingfilm 31 between the first columnar portion CLa and the first chargestorage portion 32 a is larger than the size of the inner diameter D5 ofthe tunnel insulating film 31 between the first columnar portion CLa andthe second charge storage portion 32 b. For example, the size of theinner diameter D6 of the tunnel insulating film 31 between the secondcolumnar portion CLb and the third charge storage portion 32 c is largerthan the size of the inner diameter D7 of the tunnel insulating film 31between the second columnar portion CLb and the fourth charge storageportion 32 d. For example, the size of the inner diameter D6 is largerthan the size of the inner diameter D5.

For example, the size of the inner diameter D8 of the tunnel insulatingfilm 31 between the first columnar portion CLa and the fifth chargestorage portion 32 e is not more than the inner diameter D4. The size ofthe inner diameter D8 is not less than the size of the inner diameterD5. For example, the size of the inner diameter D9 of the tunnelinsulating film 31 between the second columnar portion CLb and the sixthcharge storage portion 32 f is not more than the inner diameter D6. Thesize of the inner diameter D9 is not less than the size of the innerdiameter D7.

In the case where the electrode layer 41 contains silicon and impurity,the impurity concentration may vary for each electrode layer 41 in eachstacked portion (the stacked portion 100 a and the stacked portion 100b). For example, in a case where the electrode layer 41 included in thestacked portion 100 a contains silicon and impurity, the higher theimpurity concentration, the farther from the stacked portion 100 b theelectrode layer 41 is. In the case where the electrode layer 41 includedin the stacked portion 100 b contains silicon and impurity, the higherthe impurity concentration may be, the farther from the substrate 10 theelectrode layer 41 is.

In the semiconductor device of the second embodiment, the smaller thethickness of each charge storage portion 32 between the columnar portionCL and the electrode layer 41, the smaller the diameter of thecorresponding tunnel insulating film 31. This prevents the differencebetween the inner diameter of the block insulating film 33 and the innerdiameter of the tunnel insulating film 31 from increasing. Thus, thevariations in the coupling ratio are suppressed between the upper andlower layers of the memory cell array. For example, the variations inthe write speed can be suppressed between the upper and lower layers ofthe memory cell array. In addition, it is possible to suppress readdisturb and write disturb. This improves the stability of the writeoperation and the read operation.

In the second embodiment, the impurity concentration of the electrodelayer 41 may be changed in the respective stacked portions (the stackedportion 100 a and the stacked portion 100 b). Therefore, the lower theresistivity of the electrode layer 41, the higher the impurityconcentration of the electrode layer 41. For example, the larger thediameter of the portion of the tunnel insulating film 31 correspondingto the electrode layer 41, the lower the resistivity may be. Forexample, it is possible to correct the signal propagation delay of theword line caused by the difference in word line resistance, due to adifference between the memory hole diameters of the upper and lowerlayers of the memory cell array, by controlling the resistivity of theelectrode layer 41.

Manufacturing Method

FIGS. 16 to 21 are schematic sectional views showing the manufacturingmethod of the semiconductor device of the second embodiment. FIGS. 16 to21 correspond to the cross section shown in FIG. 14.

First, the processes shown in FIGS. 6 to 11 are performed in the samemanner as in the first embodiment. Thus, the stacked portion 100 bhaving a memory hole MH1, the charge storage portion 32, and the blockinsulating film 33 are formed, as shown in FIG. 15. The stacked portion100 b corresponds to the stacked body 100 shown in FIG. 11. Asacrificial member 61 is formed in the memory hole MH1. The memory holeMH1 is filled with the sacrificial member 61.

As shown in FIG. 17, the insulator 40 which is a third layer and theelectrode layer 41 which is a fourth layer are stacked alternately onthe stacked portion 100 b. Thereby, the stacked portion 100 a is formedon the stacked portion 100 b.

In the stacked portion 100 b, for example, the electrode layer 41 isformed of a material containing doped silicon. Examples of the dopedsilicon include one or more materials selected from the group consistedof phosphorus, arsenic, and boron. For example, the higher the impurityconcentration of the electrode layer 41 may be, the farther from thestacked portion 100 b the electrode layer 41 is. For example, theelectrode layer 41 may be formed of a material containing a metal suchas tungsten or molybdenum.

As shown in FIG. 18, a memory hole MH2 is formed on the sacrificialmember 61. The memory hole MH 2 penetrates the stacked portion 100 a inthe Z-direction. The upper surface of the sacrificial member 61 isexposed at the bottom of the memory hole MH2.

As shown in FIG. 19, a sacrificial member 50 b is formed in the memoryhole MH2. For example, the sacrificial member 50 b is formed in thelower part of the memory hole MH1. Thereafter, an etching process isperformed on the end face of the electrode layer 41 exposed in thememory hole MH2. For example, an etchant is supplied into the memoryhole MH2. Thus, the end face of the electrode layer 41 exposed in thememory hole MH2 retreats. At this time, the end portion of the electrodelayer 41 in the lower part of the memory hole MH2 is covered with thesacrificial member 50 b. Therefore, the end portion of the electrodelayer 41 in the lower part of the memory hole MH2 is not etched.

As shown in FIG. 20, the sacrificial member 50 b is removed by anetching process such as chemical dry etching. Thereafter, an etchingprocess is performed on the exposed face of the electrode layer 41. Forexample, an etchant is supplied into the memory hole MH2. Thus, the endface of the electrode layer 41 exposed in the memory hole MH2 retreats.

By performing the processes shown in FIGS. 19 and 20, the retreat amountof the end face of the electrode layer 41 of the stacked portion 100 aincreases as the distance from the stacked portion 100 b increases. Notethat in the case where the retreat amount of the end face of theelectrode layer 41 can be controlled according to the conditions of theetching process or the like, the sacrificial member 50 b may not beformed. For example, in a case where the electrode layer 41 containssilicon and impurity, the etching rate may be controlled by changing theimpurity concentration for each electrode layer 41.

As shown in FIG. 21, a block insulating film 33 is formed on the innerwall of the space generated by the retraction of the electrode layer 41of the stacked portion 100 a. The block insulating film 33 is formed of,for example, a material containing aluminum oxide. The block insulatingfilm 33 may be formed of, for example, a material containing siliconoxide. Thereafter, a charge storage portion 32 is formed in the spacegenerated by the retraction of the electrode layer 41 of the stackedportion 100 a. The charge storage portion 32 is formed of, for example,a material containing polysilicon or silicon nitride. Further, the blockinsulating film 33 and the charge storage portion 32 are etched back bychemical dry etching or the like up to a place where there is no stepfrom the memory holes MH1 and MH2 and they are aligned with theinsulator 40, and are separated for each layer. Thus, the blockinsulating film 33 and the charge storage portion 32 are formed in thestacked portion 100 a. Thereafter, a sacrificial member 50 a is removedby an etching process such as chemical dry etching.

As shown in FIG. 15, the tunnel insulating film 31 is formed on the sidewall of the memory holes MH1 and MH2. A columnar portion CL is formed inthe memory holes MH1 and MH2.

The semiconductor device of the second embodiment can be manufactured byfor example, such a manufacturing method.

THIRD EMBODIMENT Semiconductor Device

FIG. 22 is a schematic sectional view of a memory cell array of asemiconductor device of a third embodiment. FIG. 22 corresponds to apart of the cross section parallel to the XZ plane in FIG. 1. FIG. 22 isa schematic sectional view obtained by extracting a columnar portion CLand its surrounding portions.

As shown in FIG. 22, in the memory cell array 3 of the semiconductordevice of the third embodiment, a block insulating film 33 is formedbetween a charge storage portion 32 and an electrode layer 41, andbetween the electrode layer 41 and an insulator 40. The block insulatingfilm 33 may not be provided between the charge storage portion 32 andthe insulator 40. The other configuration is the same as for example,the semiconductor device of the first embodiment. An insulator 70 isprovided between the side wall of a separating portion ST and a sourcelayer SL. The insulator 70 contains for example, silicon oxide.

Similar to the first example, the smaller the thickness of each chargestorage portion 32 between the columnar portion CL and the electrodelayer 41, the closer to the substrate 10 the charge storage portion 32is. This prevents the difference between the inner diameter of the blockinsulating film 33 and the inner diameter of a tunnel insulating film 31from increasing between the upper and lower layers of the memory cellarray. This suppresses variations in the coupling ratio between theupper and lower layers of the memory cell array. For example, thevariations in the write speed can be suppressed between the upper andlower layers of the memory cell array. In addition, it is possible tosuppress read disturb and write disturb. This improves the stability ofthe write operation and the read operation.

Similar to the first embodiment, in a case where each electrode layer 41contains doped silicon, the higher the impurity concentration of theelectrode layer 41 may be, the farther from the substrate 10 theelectrode layer 41 is. Thus, the lower the resistivity of the electrodelayer 41, the farther from the substrate 10 the electrode layer 41 is.For example, it is possible to correct the signal propagation delay ofthe word line caused by the difference in word line resistance, due to adifference between the memory hole diameters of the upper and lowerlayers of the memory cell array, by controlling the resistivity of theelectrode layer 41.

Manufacturing Method

FIGS. 23 to 26 are schematic sectional views showing the manufacturingmethod of the semiconductor device of the third embodiment. FIGS. 23 to26 correspond to the cross section shown in FIG. 21.

First, the processes shown in FIG. 6 are performed. In the thirdembodiment, the insulator 40 which is a first layer and a replacementmember 42 which is a second layer are alternately stacked on thesubstrate 10. Thereby, a stacked portion 100 is formed on the substrate10. For example, the small the density of the replacement member 42 maybe, the farther from the substrate 10 the replacement member 42 is.

The replacement member 42 is a layer which is later replaced by theelectrode layer 41. The material of the replacement member 42 isselected from materials different from the insulator 40, of which theetching selection ratio can be obtained for the insulator 40. Forexample, when silicon oxide is selected as the insulator 40, siliconnitride is selected for the replacement member 42.

A memory hole MH1 is formed in the stacked body 100 by performing theprocesses shown in FIG. 7. After that, the end face of the replacementmember 42 exposed in the memory hole MH1 is etched by performing theprocesses shown in FIGS. 8 to 10. Thus, the end portion of thereplacement member 42 retreats. In a case where the retreat amount ofthe end face of the replacement member 42 can be controlled according tothe conditions of the etching process or the like, formation of thesacrificial member 50 a may be omitted. For example, the etching ratemay be controlled by controlling the density of the replacement member42.

Thereafter, as shown in FIG. 23, the charge storage portion 32 is formedin the space generated by the retraction of the end portion of thereplacement member 42, and the charge storage portion 32 is etched backby chemical dry etching or the like up to a place where there is no stepfrom the memory hole MH1 and it is aligned with the insulator 40, and isseparated for each layer.

As shown in FIG. 24, the tunnel insulating film 31 is formed on the sidewall of the memory hole MH1. Thereafter, the columnar portion CL isformed in the memory hole MH1.

As shown in FIG. 25, the separating portion ST is formed in the stackedbody 100. The separating portion ST is formed, for example, byperforming anisotropical etching on the stacked body 100. Thereafter,the replacement member 42 is removed. The replacement member 42 isremoved, for example, by a wet etching process through the separatingportion ST.

As shown in FIG. 26, the block insulating film 33 is formed on the innerwall of the space generated by removing the replacement member 42. Theelectrode layer 41 is formed in the space generated by removing thereplacement member 42. After that, as shown in FIG. 22, the insulator 70is formed on the side wall of the separating portion ST. The sourcelayer SL is formed in the separating portion ST.

The semiconductor device of the third embodiment can be manufactured by,for example, such a manufacturing method.

As described above, according to the embodiment, a semiconductor devicecapable of suppressing variations in the coupling ratio can be obtained.

While certain embodiments have been described, these embodiments havebeen presented by way of example only, and are not intended to limit thescope of the inventions. Indeed, the novel embodiments described hereinmay be embodied in a variety of other forms; furthermore, variousomissions, substitutions and changes in the form of the embodimentsdescribed herein may be made without departing from the spirit of theinventions. The accompanying claims and their equivalents are intendedto cover such forms or modification as would fall within the scope andspirit of the inventions.

What is claimed is:
 1. A semiconductor device comprising: a stacked bodyincluding a plurality of electrode layers stacked on a substrate in afirst direction with an insulator interposed between the electrodelayers, the plurality of electrode layers including a first electrodelayer, and a second electrode layer provided between the first electrodelayer and the substrate; a columnar portion extending in the firstdirection in the stacked body; a first charge storage portion providedbetween the first electrode layer and the columnar portion; and a secondcharge storage portion provided between the second electrode layer andthe columnar portion, a first thickness in a second directionintersecting the first direction of the first charge storage portionbetween the first electrode layer and the columnar portion being thickerthan a second thickness in the second direction of the second chargestorage portion between the second electrode layer and the columnarportion.
 2. The device according to claim 1, further comprising: a thirdcharge storage portion, the plurality of electrode layers furtherinclude a third electrode layer provided between the first electrodelayer and the second electrode layer, and the third charge storageportion is provided between the third electrode layer and the columnarportion, and a third thickness in the second direction of the thirdcharge storage portion between the third electrode layer and thecolumnar portion is a thickness not more than the first thickness, andthe third thickness is not less than the second thickness.
 3. The deviceaccording to claim 1, wherein a diameter of the columnar portion in thefirst electrode layer is larger than a diameter of the columnar portionin the second electrode layer.
 4. The device according to claim 1,wherein each of the plurality of electrode layers includes silicon andimpurity.
 5. The device according to claim 4, wherein a concentration ofthe impurity in the first electrode layer is higher than a concentrationof the impurity in the second electrode layer.
 6. The device accordingto claim 1, wherein each of the plurality of electrode layers contains ametal.
 7. The device according to claim 1, further comprising: a tunnelinsulating film provided between the columnar portion and the firstcharge storage portion, and between the columnar portion and the secondcharge storage portion; a first block insulating film provided betweenthe first electrode layer and the first charge storage portion; and asecond block insulating film provided between the second electrode layerand the second charge storage portion.
 8. The device according to claim7, wherein the first inner diameter of the tunnel insulating filmbetween the columnar portion and the first charge storage portion islarger than the second inner diameter of the tunnel insulating filmbetween the columnar portion and the second charge storage portion. 9.The device according to claim 2, further comprising: a tunnel insulatingfilm provided between the columnar portion and the first charge storageportion, between the columnar portion and the second charge storageportion, and between the columnar portion and the third charge storageportion; a first block insulating film provided between the firstelectrode layer and the first charge storage portion; a second blockinsulating film provided between the second electrode layer and thesecond charge storage portion; and a third block insulating filmprovided between the third electrode layer and the third charge storageportion, the first inner diameter of the tunnel insulating film betweenthe columnar portion and the first charge storage portion is larger thanthe second inner diameter of the tunnel insulating film between thecolumnar portion and the second charge storage portion, the third innerdiameter of the tunnel insulating film between the columnar portion andthe third charge storage portion is not more than the first innerdiameter, and the third inner diameter is not less than the second innerdiameter.
 10. A semiconductor device comprising: a first stacked portionprovided on the substrate, the first stacked portion including a firstelectrode layer and a second electrode layer, the second electrode layerbeing provided between the substrate and the first electrode layer; asecond stacked portion provided between the substrate and the firststacked portion, the second stacked portion including a third electrodelayer and a fourth electrode layer, the fourth electrode layer beingprovided between the substrate and the third electrode layer; a firstcolumnar portion provided in the first stacked portion, the firstcolumnar portion extending in a first direction from the first stackedportion to the substrate; a second columnar portion which is provided inthe second stacked portion and extends in the first direction, thesecond columnar portion being connected to the first columnar portion; afirst charge storage portion provided between the first electrode layerand the first columnar portion; a second charge storage portion providedbetween the second electrode layer and the first columnar portion; athird charge storage portion provided between the third electrode layerand the second columnar portion; and a fourth charge storage portionprovided between the fourth electrode layer and the second columnarportion, a first thickness in a second direction intersecting the firstdirection of the first charge storage portion between the firstelectrode layer and the first columnar portion being thicker than asecond thickness in the second direction of the second charge storageportion between the second electrode layer and the first columnarportion, and a third thickness in the second direction of the thirdcharge storage portion between the third electrode layer and the secondcolumnar portion being thicker than a fourth thickness in the seconddirection of the fourth charge storage portion between the fourthelectrode layer and the second columnar portion.
 11. The deviceaccording to claim 10, wherein the second thickness is less than thethird thickness.
 12. The device according to claim 10, furthercomprising: a fifth charge storage portion; a sixth charge storageportion; a fifth electrode layer provided between the first electrodelayer and the second electrode layer; and a sixth electrode layerprovided between the third electrode layer and the fourth electrodelayer, the fifth charge storage portion is provided between the fifthelectrode layer and the first columnar portion, a fifth thickness in thesecond direction of the fifth charge storage portion between the fifthelectrode layer and the first columnar portion is not more than thefirst thickness, and the fifth thickness is not less than the secondthickness, and the sixth charge storage portion is provided between thesixth electrode layer and the second columnar portion, a sixth thicknessin the second direction of the sixth charge storage portion between thesixth electrode layer and the second columnar portion is not more thanthe third thickness, and the sixth thickness is not less than the fourththickness.
 13. The device according to claim 10, wherein the diameter ofthe first columnar portion in the first electrode layer is larger thanthe diameter of the second columnar portion in the second electrodelayer, and the diameter of the second columnar portion in the thirdelectrode layer is larger than the diameter of the second columnarportion in the fourth electrode layer.
 14. The device according to claim10, wherein a diameter of a lower end portion of the first columnarportion is smaller than a diameter of an upper end portion of the secondcolumnar portion.
 15. The device according to claim 10, wherein each ofthe first to fourth electrode layers contains silicon and impurity. 16.The device according to claim 15, wherein a concentration of theimpurity in the first electrode layer is higher than a concentration ofthe impurity in the second electrode layer, and a concentration of theimpurity in the third electrode layer is higher than a concentration ofthe impurity in the fourth electrode layer.
 17. The device according toclaim 10, wherein each of the first to the fourth electrode layerscontains a metal.
 18. The device according to claim 10, furthercomprising: a tunnel insulating film provided between the first columnarportion and the first charge storage portion, between the first columnarportion and the second charge storage portion, between the secondcolumnar portion and the third charge storage portion, and between thesecond columnar portion and the fourth charge storage portion; a firstblock insulating film provided between the first electrode layer and thefirst charge storage portion; a second block insulating film providedbetween the second electrode layer and the second charge storageportion; a third block insulating film provided between the thirdelectrode layer and the third charge storage portion; and a fourth blockinsulating film provided between the fourth electrode layer and thefourth charge storage portion.
 19. The device according to claim 18,wherein a first inner diameter of the tunnel insulating film between thefirst columnar portion and the first charge storage portion is largerthan a second inner diameter of the tunnel insulating film between thefirst columnar portion and the second charge storage portion, and athird inner diameter of the tunnel insulating film between the secondcolumnar portion and the third charge storage portion is larger than afourth inner diameter of the tunnel insulating film between the secondcolumnar portion and the fourth charge storage portion.
 20. The deviceaccording to claim 19, wherein the third inner diameter is larger thanthe second inner diameter.